arXiv 07/30/09

Title: Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph M.
McCrate, Stephen A. Kitt, Paul M. Campbell, Glenn G. Jernigan, James C.
Culbertson, Charles R. Eddy, Jr., and D. Kurt Gaskill
Abstract: Epitaxial graphene films were grown in vacuo by silicon sublimation from the
(0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet
carrier densities of the films were measured at 300 K and 77 K and the data
depended on the growth face. About 40% of the samples exhibited holes as the
dominant carrier, independent of face. Generally, mobilities increased with
decreasing carrier density, independent of carrier type and substrate polytype.
The contributions of scattering mechanisms to the conductivities of the films
are discussed. The results suggest that for near-intrinsic carrier densities at
300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1)
face and ~5,800 cm2V-1s-1 on the (0001) face.
\\ ( http://arxiv.org/abs/0907.5026 , 400kb)

Title: Disorder-based graphene spintronics
Authors: A. R. Rocha, T. B. Martins, A. Fazzio and A. J. R. da Silva
\\
The use of the spin of the electron as the ultimate logic bit - in what has
been dubbed spintronics - can lead to a novel way of thinking about information
flow. At the same time single layer graphene has been the subject of intense
research due to both its fundamental properties as well as its potential
application in nanoscale electronics. While defects can significantly alter the
electronic properties of nanoscopic systems, the lack of control can lead to
seemingly deleterious effects arising from the random arrangement of such
impurities. Here we demonstrate, using {\it ab initio} density functional
theory and non-equilibrium Green's functions calculations, that it is possible
to obtain perfect spin selectivity in doped graphene nanoribbons to produce a
perfect spin filter. We show that initially unpolarized electrons entering the
system give rise to 100% polarization of the current due to random disorder.
This effect is explained in terms of different localization lengths for each
spin channel which together with the well know exponential dependence of the
conductance on the length of the device leads to a new mechanism for the spin
filtering effect that is enhanced by disorder.
\\ ( http://arxiv.org/abs/0907.5027 , 1236kb)

Title: Graphene formation on SiC substrates
Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R.
Eddy, Jr., Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, Joseph
M. McCrate, Stephen A. Kitt and D. Kurt Gaskill
Comments: European Conference on Silicon Carbide and Related Materials 2008
(ECSCRM '08), 4 pages, 4 figures
Journal-ref: Mater. Sci. Forum 615-617, 211 (2009)
\\ ( http://arxiv.org/abs/0907.5028 , 280kb)

Title: Improvement of Morphology and Free Carrier Mobility through
Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Journal-ref: ECS Trans. 19, 137 (2009)
\\ ( http://arxiv.org/abs/0907.5029 , 442kb)

Title: Epitaxial Graphene Growth on SiC Wafers
Authors: D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell, Joseph L.
Tedesco, James C. Culbertson, Brenda L. VanMil, Rachael L. Myers-Ward,
Charles R. Eddy, Jr. Jeong Moon, D. Curtis, M. Hu, D. Wong, C. McGuire,
Joshua A. Robinson, Mark A. Fanton, Joseph P. Stitt, Thomas Stitt, David
Snyder, Xiaojun Weng, and Eric Frantz
Comments: 215th Meeting of the Electrochemical Society, 8 pages, 8 figures
Journal-ref: ECS Trans. 19, 117 (2009)
\\ ( http://arxiv.org/abs/0907.5031 , 2491kb)

Title: Weak (anti-)localization in doped Z_2-topological insulator
Authors: Ken-Ichiro Imura, Yoshio Kuramoto, Kentaro Nomura
\\ ( http://arxiv.org/abs/0907.5051 , 2215kb)


Title: Construction of localized wave functions for a disordered optical
lattice and analysis of the resulting Hubbard model parameters
Authors: S. Q. Zhou and D. M. Ceperley
\\ ( http://arxiv.org/abs/0907.5053 , 390kb)

Title: Quantum Hall Effect in Biased Bilayer Graphene
Authors: R. Ma, L. J. Zhu, L. Sheng, M. Liu and D. N. Sheng
Journal-ref: Europhys. Lett. 87, 17009 (2009)
\\ ( http://arxiv.org/abs/0905.1928 , 239kb)