Thursday, July 30, 2009

arXiv 07/30/09

Title: Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph M.
McCrate, Stephen A. Kitt, Paul M. Campbell, Glenn G. Jernigan, James C.
Culbertson, Charles R. Eddy, Jr., and D. Kurt Gaskill
Abstract: Epitaxial graphene films were grown in vacuo by silicon sublimation from the
(0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet
carrier densities of the films were measured at 300 K and 77 K and the data
depended on the growth face. About 40% of the samples exhibited holes as the
dominant carrier, independent of face. Generally, mobilities increased with
decreasing carrier density, independent of carrier type and substrate polytype.
The contributions of scattering mechanisms to the conductivities of the films
are discussed. The results suggest that for near-intrinsic carrier densities at
300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1)
face and ~5,800 cm2V-1s-1 on the (0001) face.
\\ ( http://arxiv.org/abs/0907.5026 , 400kb)

Title: Disorder-based graphene spintronics
Authors: A. R. Rocha, T. B. Martins, A. Fazzio and A. J. R. da Silva
\\
The use of the spin of the electron as the ultimate logic bit - in what has
been dubbed spintronics - can lead to a novel way of thinking about information
flow. At the same time single layer graphene has been the subject of intense
research due to both its fundamental properties as well as its potential
application in nanoscale electronics. While defects can significantly alter the
electronic properties of nanoscopic systems, the lack of control can lead to
seemingly deleterious effects arising from the random arrangement of such
impurities. Here we demonstrate, using {\it ab initio} density functional
theory and non-equilibrium Green's functions calculations, that it is possible
to obtain perfect spin selectivity in doped graphene nanoribbons to produce a
perfect spin filter. We show that initially unpolarized electrons entering the
system give rise to 100% polarization of the current due to random disorder.
This effect is explained in terms of different localization lengths for each
spin channel which together with the well know exponential dependence of the
conductance on the length of the device leads to a new mechanism for the spin
filtering effect that is enhanced by disorder.
\\ ( http://arxiv.org/abs/0907.5027 , 1236kb)

Title: Graphene formation on SiC substrates
Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R.
Eddy, Jr., Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, Joseph
M. McCrate, Stephen A. Kitt and D. Kurt Gaskill
Comments: European Conference on Silicon Carbide and Related Materials 2008
(ECSCRM '08), 4 pages, 4 figures
Journal-ref: Mater. Sci. Forum 615-617, 211 (2009)
\\ ( http://arxiv.org/abs/0907.5028 , 280kb)

Title: Improvement of Morphology and Free Carrier Mobility through
Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Journal-ref: ECS Trans. 19, 137 (2009)
\\ ( http://arxiv.org/abs/0907.5029 , 442kb)

Title: Epitaxial Graphene Growth on SiC Wafers
Authors: D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell, Joseph L.
Tedesco, James C. Culbertson, Brenda L. VanMil, Rachael L. Myers-Ward,
Charles R. Eddy, Jr. Jeong Moon, D. Curtis, M. Hu, D. Wong, C. McGuire,
Joshua A. Robinson, Mark A. Fanton, Joseph P. Stitt, Thomas Stitt, David
Snyder, Xiaojun Weng, and Eric Frantz
Comments: 215th Meeting of the Electrochemical Society, 8 pages, 8 figures
Journal-ref: ECS Trans. 19, 117 (2009)
\\ ( http://arxiv.org/abs/0907.5031 , 2491kb)

Title: Weak (anti-)localization in doped Z_2-topological insulator
Authors: Ken-Ichiro Imura, Yoshio Kuramoto, Kentaro Nomura
\\ ( http://arxiv.org/abs/0907.5051 , 2215kb)


Title: Construction of localized wave functions for a disordered optical
lattice and analysis of the resulting Hubbard model parameters
Authors: S. Q. Zhou and D. M. Ceperley
\\ ( http://arxiv.org/abs/0907.5053 , 390kb)

Title: Quantum Hall Effect in Biased Bilayer Graphene
Authors: R. Ma, L. J. Zhu, L. Sheng, M. Liu and D. N. Sheng
Journal-ref: Europhys. Lett. 87, 17009 (2009)
\\ ( http://arxiv.org/abs/0905.1928 , 239kb)

Sunday, July 26, 2009

arXiv 07/26/09

Title: Epitaxial graphene on SiC(0001): More than just honeycombs
Authors: Y. Qi, S. H. Rhim, G. F. Sun, M. Weinert, and L. Li
\\ ( http://arxiv.org/abs/0907.4187 , 1251kb)

Title: Bogoliubov Theory of acoustic Hawking radiation in Bose-Einstein
Condensates
Authors: A. Recati, N. Pavloff, I. Carusotto
\\ ( http://arxiv.org/abs/0907.4305 , 152kb)

Title: Induced magnetism of carbon atoms at the graphene/Ni(111) interface
Authors: M. Weser, Y. Rehder, Yu. S. Dedkov, K. Horn, M. Sicot, M. Fonin, A.
Preobtajenski, and E. N. Voloshina
\\ ( http://arxiv.org/abs/0907.4344 , 540kb)

Title: Switching Energy of Ferromagnetic Logic Bits
Authors: Behtash Behin-Aein, Sayeef Salahuddin and Supriyo Datta
Journal-ref: IEEE Transactions on Nanotechnology, Vol. 8, Issue 4, pp.505-514
(2009)
DOI: 10.1109/TNANO.2009.2016657
\\ ( http://arxiv.org/abs/0804.1389 , 905kb)

Title: Supersolidity of Cold Atomic Bose-Fermi mixtures in optical lattices
Authors: Peter P. Orth, Doron L. Bergman, and Karyn Le Hur
\\ ( http://arxiv.org/abs/0905.1125 , 1329kb)

Tuesday, July 21, 2009

arXiv 07/22/09

Three-dimensional imaging of short-range chemical forces with picometre resolution

Title: Selecting a single orientation for millimeter sized graphene sheets
Authors: R. van Gastel, A.T. N'Diaye, D. Wall, J. Coraux, C. Busse, F.-J. Meyer
zu Heringdorf, N. Buckanie, M. Horn von Hoegen, T. Michely, B. Poelsema
\\ ( http://arxiv.org/abs/0907.3580 , 2354kb)

Title: Two-Poton Correlations of Luminescence under Bose-Einstein Condensation
of Dipolar Excitons
Authors: A.V. Gorbunov, V.B. Timofeev, D.A. Demin, A.A. Dremin
\\ ( http://arxiv.org/abs/0907.3612 , 119kb)

Title: Wavevector filtering through single-layer and bilayer graphene with
magnetic barrier structures
Authors: M. Ramezani Masir, P. Vasilopoulos, and F. M. Peeters
Journal-ref: Appl. Phys. Lett. 93, 242103 (2008)
\\ ( http://arxiv.org/abs/0907.3656 , 595kb)

!!Title: Tunable Superconducting Phase Transition in Metal-Decorated Graphene
Sheets
Authors: B.M. Kessler, C.O.Girit, A.Zettl and V. Bouchiat
Categories: cond-mat.mes-hall
\\
Using typical experimental techniques it is difficult to separate the effects
of carrier density and disorder on the superconducting transition in two
dimensions. Using a simple fabrication procedure based on metal layer
dewetting, we have produced graphene sheets decorated with a non-percolating
network of nanoscale tin clusters. These metal clusters both efficiently dope
the graphene substrate and induce long-range superconducting correlations. This
allows us to study the superconducting transition at fixed disorder and
variable carrier concentration. We find that despite structural inhomogeneity
on mesoscopic length scales (10-100 nm), this material behaves electronically
as a homogenous dirty superconductor. Our simple self-assembly method
establishes graphene as an ideal tunable substrate for studying induced
two-dimensional electronic systems at fixed disorder and our technique can
readily be extended to other order parameters such as magnetism.
\\ ( http://arxiv.org/abs/0907.3661 , 357kb)

arXiv:0907.3684
Date: Tue, 21 Jul 2009 15:59:01 GMT (1837kb,D)

Title: Memristive switching of MgO based magnetic tunnel junctions
Authors: P. Krzysteczko, G. Reiss and A. Thomas
\\ ( http://arxiv.org/abs/0907.3684 , 1837kb)

!!Title: Performance of Monolayer Graphene Nanomechanical Resonators with
Electrical Readout
Authors: Changyao Chen, Sami Rosenblatt, Kirill I. Bolotin, William Kalb,
Philip Kim, Ioannis Kymissis, Horst L. Stormer, Tony F. Heinz, James Hone
Categories: cond-mat.mes-hall
\\
The enormous stiffness and low density of graphene make it an ideal material
for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and
electrical readout of monolayer graphene resonators, and test their response to
changes in mass and temperature. The devices show resonances in the MHz range.
The strong dependence of the resonant frequency on applied gate voltage can be
fit to a membrane model, which yields the mass density and built-in strain.
Upon removal and addition of mass, we observe changes in both the density and
the strain, indicating that adsorbates impart tension to the graphene. Upon
cooling, the frequency increases; the shift rate can be used to measure the
unusual negative thermal expansion coefficient of graphene. The quality factor
increases with decreasing temperature, reaching ~10,000 at 5 K. By establishing
many of the basic attributes of monolayer graphene resonators, these studies
lay the groundwork for applications, including high-sensitivity mass detectors.
\\ ( http://arxiv.org/abs/0907.3721 , 929kb)

Title: Casimir interaction between a perfect conductor and graphene described
by the Dirac model
Authors: M. Bordag, I. V. Fialkovsky, D. M. Gitman, D. V. Vassilevich
\\ ( http://arxiv.org/abs/0907.3242 , 46kb)

Title: Observation of the Anderson Metal-Insulator Transition with Atomic
Matter Waves: Theory and Experiment
Authors: Gabriel Lemari\'e (LKB - Jussieu), Julien Chab\'e (PhLAM, CERLA),
Pascal Szriftgiser (PhLAM, CERLA), Jean-Claude Garreau (PhLAM, CERLA),
Beno\^it Gr\'emaud (LKB - Jussieu), Dominique Delande (LKB - Jussieu)
\\
Using a cold atomic gas exposed to laser pulses -- a realization of the
chaotic quasiperiodic kicked rotor with three incommensurate frequencies -- we
study experimentally and theoretically the Anderson metal-insulator transition
in three dimensions. Sensitive measurements of the atomic wavefunction and the
use of finite-size scaling techniques make it possible to unambiguously
demonstrate the existence of a quantum phase transition and to measure its
critical exponents. By taking proper account of systematic corrections to
one-parameter scaling, we show the universality of the critical exponent
$\nu=1.59\pm0.01,$ which is found to be equal to the one previously computed
for the Anderson model.
\\ ( http://arxiv.org/abs/0907.3411 , 953kb)

[Topological Ins] Title: Majorana Fermion Induced Resonant Andreev Reflection
Authors: K. T. Law, Patrick A. Lee, and T. K. Ng
\\ ( http://arxiv.org/abs/0907.1909 , 356kb)

Sunday, July 19, 2009

arXiv 07/19/2009

Title: Mott physics and band topology in materials with strong spin-orbit
interaction
Authors: D. A. Pesin, Leon Balents
\\ ( http://arxiv.org/abs/0907.2962 , 175kb)

Title: Spin Hall Drag
Authors: S. M. Badalyan and G. Vignale
\\ ( http://arxiv.org/abs/0907.2995 , 77kb)

Title: Analysis of conductivity degradation due to liner layers in nanoscale
interconnect technology
Authors: Baruch Feldman and Scott T. Dunham
\\ ( http://arxiv.org/abs/0907.2999 , 164kb)


Title: Spin drag in noncondensed Bose gases
Authors: R.A. Duine, H.T.C. Stoof
\\ ( http://arxiv.org/abs/0907.3017 , 159kb)

Title: Stable Topological Superfluid Phase of Ultracold Polar Fermionic
Molecules
Authors: N. R. Cooper and G. V. Shlyapnikov
\\ ( http://arxiv.org/abs/0907.3080 , 37kb)

Title: Topological Control: Systematic control of topological insulator Dirac
fermion density on the surface of Bi2Te3
Authors: Y. Xia, D. Qian, D. Hsieh, R. Shankar, H. Lin, A. Bansil, A.V.
Fedorov, D. Grauer, Y.S. Hor, R.J. Cava, M.Z. Hasan
\\ ( http://arxiv.org/abs/0907.3089 , 1684kb)
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